Through research, be innovative in technology, has made a number of independent intellectual Science and Technology Achievements Watson meter property, mainly:
(1) Mask Fudan invention - maskless etching process for the international initiative. Not only achieved lobe appears at [311] face basic law, in theory, also derive new conditions and new underside of the bottom surface of the depth and location of the formulas on the experiment, creating a new process using etching technology to produce microstructures. Use KOH etchant corrosion rate differences for different facets, both in theory and technology solves the 4 /& mu forming process using a mask technique, three-dimensional multi-layer multilayer structure layer poor control precision micro-mechanical structure; within m, transfer plane flatness better than 1 /tm, received a patent.
(2), Tsinghua University successfully developed quartz resonator based on the effect of strain-sensitive digital force and load cell. Research on the energy relationship between the force sensitive, sensitive resonator element trap effect and resonance frequency, harmonic frequency and structure, to ensure a good frequency stability. Developed a special adhesive, solves the key process on creep and hysteresis sensor performance improves sensor performance and yield. First at home and abroad to develop a series of downstream applications & mdhistriadn; & mdhistriadn; all kinds of quartz electronic scales. Made six utility model patents, patent an invention, receiving four patents.
(3) Harbin University successfully developed & quot; new intrinsic semiconducting polymer pressure-temperature two-parameter sensor & quot ;, the first quinone radical polymer Poly province, which is a highly sensitive factor and temperature coefficient polymer materials, surface treatment technology had made sensors, to solve the high temperature submersible pump oil temperature and pressure measurement problems. After retrieval showed that the new polymer intrinsic parameters of pressure and temperature sensors dual international initiative, has accepted a patent.
(4) Shenyang Institute of Instrumentation Technology in the country for the first time to solve the diffusion force-sensitive silicon chip temperature sensitivity of the self-compensation process. By adjusting the planar process doping process parameters to achieve the full temperature region in -30-80C, force-sensitive chip sensitivity temperature drift is controlled within 5% o, the realization of the diffusion force-sensitive silicon chip sensitivity temperature self-compensation .
(5) Shenyang Institute of Instrumentation Technology developed a high sensitivity bureaub film preparation process to solve the high-density, high magnetic permeability ferrite substrate grinding and polishing process, In, Sb elemental evaporation process, grinding sensitive layer micron thinned processes and enhance chip sensitivity doping process, developed bureaub film fully able to meet the needs of high-performance magnetic components of the preparation. We made two utility model patents and inventions and patents.
