Piezoresistive sensor has two types: one kind is made use of semiconductor material body resistance type of strain gages, the formation of semiconductor strain sensor; Another kind is the substrate of semiconductor material made of integrated circuit technology diffusion resistance, constitute a sensitive element, called diffusion type pressure resistance sensor.

Piezoresistive sensor are greatly influenced by temperature, produce zero drift and sensitivity drift, and thus the temperature error is produced.

Piezoresistive sensor, the temperature of the diffusion resistance coefficient is larger, the electric resistance changes with temperature, so the zero drift of sensor.

Sensor sensitivity temperature drift is caused by pressure resistance coefficient changing with temperature. When the temperature rises, the pressure resistance coefficient decreases, the sensor sensitivity to reduce, on the other hand, has higher sensitivity.